Accession Number:

AD0720491

Title:

RF Sputtered Aluminum Oxide Films on Silicon,

Descriptive Note:

Corporate Author:

TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1970-01-29

Pagination or Media Count:

5.0

Abstract:

The physical and electrical properties of aluminum oxide films deposited on silicon by rf sputtering from an alumina target in an argon atmosphere were investigated as a function of sputtering power density in the range from 0.5 to 3 Wsq cm. The deposition rates ranged from 20 to 80 Amin. The density, index of refraction, and dielectric constant of the films increased while the etch rate decreased with increasing power density. The surface charge at the aluminum oxide-silicon interface was typically larger than 10 to the 12th. This charge increased with increasing sputtering power density and could be reduced to 7-8 x 10 to the 11th esq cm by annealing. The films exhibited trapping instabilities at room temperature but no polarization was observed under biastemperature stress. The characteristics of composite layers of thermally grown silicon dioxide and sputtered aluminum oxide layers on silicon were also investigated and found to exhibit low surface charge densities, no hysteresis, and a contact potential as well as charge stored at the interface between the two insulators. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE