Conduction Mechanisms in Thick Film Microcircuits
Semi-annual technical rept. 1 Jul-31 Dec 1970
PURDUE RESEARCH FOUNDATION LAFAYETTE IN
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Previous work on conduction mechanisms in thick film microcircuits is reviewed and the goals of the current project outlined. The design and performance of a programmable time-temperature firing facility, and an automatic resistance measuring system is described. The test system chosen for thick film resistor studies was ruthenium dioxide conductive, PbO-B2O3-SiO2 glass, and 96 Al2O3 substrate. Published data on the thermophysical properties of each of these ingredients are discussed, and results from this project are included to more nearly complete the characterization of each. The contact resistance, of RuO2 powder was measured as a function of isostatic pressure a change by only a factor of two was observed up to 15,000 psi. Studies of small RuO2 single crystals encased in glass indicated a very low solubility. The resistance of an RuO2 resistor during fabrication was measured, and the results are compared to the behavior of the RuO2 single crystals in glass.
- Electrical and Electronic Equipment