Investigations as to the Noise Characteristics of GaAs Avalanche Transit Time Diode Oscillators.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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Gallium arsenide p-n junction avalanche transit time oscillators were characterized with respect to noise performance. The results of these measurements were compared to other p-n junction oscillators, Read diodes, and Gunn diodes. Measurements include receiver noise, using these devices as local oscillators for both balanced and single-ended mixer configurations AM noise sideband-to-carrier ratios FM noise sideband-to-carrier ratios, and AM and FM noise sideband-to-carrier ratios with cavity locking thermal noise as a function of reverse bias current and amplifier noise figure. In general, the GaAs devices were superior in all respects to the Si- p-n and Si-Read structures. It also exhibited better FM noise than the Gunn oscillator and only slightly worse AM noise. Author
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