Accession Number:

AD0716941

Title:

Light-Diode Matrices Made from Silicon Carbide for Indicators of ETsVM,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date:

1970-09-03

Pagination or Media Count:

13.0

Abstract:

Utilization of integrated circuits as ETsVM elements makes possible a considerable increase in their reliability in this case the size, weight and power of these devices is decreased. Accordingly new requirements are being placed on light indicators of ETsVM. Indicators and elements of control circuits must meet rigid climatic and mechanical requirements, operate on low power and match with control voltages and currents with integrated circuits. In the present article problems of creation of reliable indicators satisfying the above requirements, using semiconductor light indicator elements are considered. These indicator elements are semiconductor diodes made from material with a broad forbidden band. When forward bias is applied to such a diode, nonequilibrium carriers passing through the junction recombine moreover, part of them recombine with radiation of quanta of visible or infrared radiation. The magnitude of quanta energy depends on the width of the forbidden band of the material and the nature of the center responsible for emission recombination. Visible radiation of diodes from GaP is already being used in small sources of light. However, utilization of light indicator devices in the form of a shining point is not always expedient, since the results of calculations conducted on ETsVM are conveniently transferred.

Subject Categories:

  • Electrical and Electronic Equipment
  • Air Conditioning, Heating, Lighting and Ventilating

Distribution Statement:

APPROVED FOR PUBLIC RELEASE