Accession Number:

AD0716810

Title:

The Structure of Amorphous Materials

Descriptive Note:

Semi-annual technical rept. no. 1, 1 Jun-30 Nov 1970

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s):

Report Date:

1970-11-30

Pagination or Media Count:

5.0

Abstract:

The report describes investigations into the atomic arrangement in amorphous materials which are used as semiconductor switches. Amorphous As2Se3 has been selected as a typical threshold switch and amorphous Te85Ge15 as a typical memory switch. Small amounts of Te and Sb are usually added to As2Se3 to adjust the conductivity. In a similar way small amounts of As and Sb are usually added to Te85Ge15 to improve the switching lifetime. The author plans to investigate the structures with and without the alloy additions, but it is anticipated that there will be little change in the atomic arrangement in the doped material. It appears that there is considerable short range structure in these materials, and it is desired to correlate this structure with the switching characteristics.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE