Accession Number:

AD0716655

Title:

Magnetic-Field-Induced Semiconductor-Semimetal Transition in Bi-Sb Alloys,

Descriptive Note:

Corporate Author:

NATIONAL RESEARCH COUNCIL OF CANADA OTTAWA (ONTARIO) DIV OF PHYSICS

Personal Author(s):

Report Date:

1970-06-02

Pagination or Media Count:

28.0

Abstract:

Accurate and detailed measurements of the temperature dependence of the longitudinal magnetoresistance of single-crystal Bi-Sb alloys have been made, with static magnetic fields in the range 0-100 kG oriented parallel to the trigonal axis. Alloy concentrations were in the range 8-12 at.Sb, and temperatures in the range 1-35 K. At very high fields the resistance increases with increasing temperature in a metallic manner with ideal and residual components, in contrast to the semiconductor behavior observed at zero field or low fields. For the high-field semimetal regime the electrical resistance behaves in a simple manner similar to a metal in zero field, in contrast to the complicated magnetoresistance phenomena for metals in low fields. This behavior can be understood in terms of a simple quasi-one-dimensional extreme-quantum-limit regime. The magnetic-field-induced semiconductor-semimetal transition is associated with an energy gap and changes of the energy-band structure which are of order 1 meV. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE