Accession Number:

AD0713845

Title:

Vapor Deposited Titanium Dioxide Thin Films: Some Properties as a Function of Crystalline Phase.

Descriptive Note:

Technical rept.,

Corporate Author:

TEXAS UNIV AUSTIN ELECTRONICS RESEARCH CENTER

Report Date:

1970-04-15

Pagination or Media Count:

153.0

Abstract:

Thin films of TiO2 are grown in a low temperature 150C vapor deposition process by hydrolyzing tetraisopropyl titanate at the substrate. These films can be made uniform over a 1-14 in substrate to within 100 A and are found to be amorphous in the as grown condition. Films in the amorphous state have an index of refraction of 2.0 and can be etched easily 50 Asec in 0.5 HF. Annealing in air at 350C converts the film to the anatase tetragonal crystalline form and at 700C to a mixture of anatase and rutile. Both forms are quite etch resistant, but the anatase can be etched by HF and warm H2SO4. At 1000C, the film is completely rutile with an index of refraction of 2.5. This form is extremely etch resistant even in 120C H2SO4 1000 Ahour. The conversion from amorphous to rutile is accompanied by a thickness decrease of 36. Author

Subject Categories:

  • Miscellaneous Materials
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE