Accession Number:

AD0713602

Title:

WIDE-BAND HOT-CARRIER DIODE GATE WITH APPLICATION TO ELECTRON-HOLE PLASMAS,

Descriptive Note:

Corporate Author:

BOEING SCIENTIFIC RESEARCH LABS SEATTLE WASH

Report Date:

1970-09-01

Pagination or Media Count:

19.0

Abstract:

A sampling or tone-burst gating system using hot-carrier diodes has been designed and shown to have the following characteristics band width, dc to 1GHz rise and fall times, typically or 3nsec and 5nsec power capacility, about 100mW gating pulse frquency, 10Hz to 1MHz gating pulse width, 50nsec to 5msec leakage, 45db down at 100kHz and about 24 db down at 500MHz gate isolation from common ground reference, 60db at all frequencies input and output impedances, adjustable to match source and load. As this gating system consists of two identical gates in parallel, it presents a constant impedance to prevent undesirable loading perturbations of the rf source. The gate can be synchronized with an rf signal whose frequency is or 1GHz and with the described design changes, may be synchronized with about 10GHz signal. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE