Accession Number:

AD0712484

Title:

IMPACT IONIZATION, BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY AND OTHER NONEQUILIBRIUM CARRIER PHENOMENA IN InSb,

Descriptive Note:

Corporate Author:

BOEING SCIENTIFIC RESEARCH LABS SEATTLE WASH

Personal Author(s):

Report Date:

1970-09-01

Pagination or Media Count:

114.0

Abstract:

The hot electron effect, injection, impact ionization and bulk negative differential conductivity are nonequilibrium carrier phenomena that some semiconductors exhibit. In particular, all four phenomena affect conduction in InSb in a strongly interrelated manner. This work shows the interrelationship of these four nonequilibrium phenomena in InSb and describes two new effects a temporal and spatial relationship between type-N and type-S bulk negative differential conductivity BNDC in n-type InSb and the existence of an impact ionization wavefront which is reponsible for the initiation of this carrier generation mechanism in p-type InSb. These results are presented in two parts Part I contains a discussion of all these nonequilibrium carrier phenomena in n-type InSb, and Part II treats injection and impact ionization in p-type InSb. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE