A DESIGN AND EVALUATION OF AN ION IMPLANTATION SYSTEM
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
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A machine originally designed as a bakeable, monoenergetic sputtering apparatus was redesigned for use as an ion implantation system. Engineering modifications produced a virtually oil-free high-vacuum system. The base pressure of the system unbaked in its present configuration is 1 x 10 to the minus 8th power Torr. A 0.8-microamperes, 6.5-keV nitrogen ion beam was obtained. The machine, after modifications, was studied to determine its feasibility as an ion implantation system. If beam voltages greater than 10 kV are used, the machine will be suitable to perform small-area implants areas approximately equal to 0.5 sqcm with dopants available in gaseous form non-corrosive ranging in energy from 10 to 30 keV.
- Particle Accelerators
- Solid State Physics