CONDUCTION MECHANISMS IN HIGH QUALITY GALLIUM ARSENIDE.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The purpose of the project was to investigate the conduction mechanisms in high quality GaAs by precisely measuring the resistivity and Hall constant and from this calculate the mobility. These results were then compared to theory. Equipment for this purpose was designed and built. A bulk GaAs specimen was investigated. The results showed that a combination of polar-optical and ionized impurity scattering were the predominate mechanisms from room temperature to 66K, and that ionized impurity scattering was predominate from 66K to 20K. From 20K to 4.2K no determination of scattering mechanisms could be made because the assumption that the value of the scattering factor was one, was not valid in this range. Author
- Electricity and Magnetism
- Solid State Physics