Accession Number:

AD0711860

Title:

DETAILS OF HIGH QUANTUM EFFICIENCY PHOTOEMISSION IN GALLIUM ARSENIDE

Descriptive Note:

Technical rept.

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

• James, Lawrence W.

Report Date:

1969-03-01

Pagination or Media Count:

123.0

Abstract:

Considerable interest has been shown in developing a practical photocathode using the GaAs-Cs system. It was felt that a thorough study of the photoemission from vacuum cleaved surfaces would eliminate the variable of surface preparation, and allow a detailed examination of the photoemission process in GaAs. In the process of this examination, new instrumentation allowing high resolution measurement of emitted electron energy distributions and their derivatives was developed, and played a critical role in making sufficient information available from experiment to allow the description of the photoemission process in terms of meaningful quantitative theories. In parallel with other laboratories, a process was developed for applying additional layers of oxygen and cesium to the surface, resulting in a lower vacuum level and an increased quantum efficiency. The report covers in detail the methods and results of the experimental work conducted, and the theories which have been developed to explain the experimental results.

Descriptors:

• *GALLIUM
• *PHOTOCATHODES
• *PHOTOELECTRIC EFFECT
• CESIUM
• DOPING
• ELECTRONS
• NUCLEAR SHELL MODELS
• OXYGEN
• PHONONS
• SCATTERING
• SEEBECK EFFECT

Subject Categories:

• Electrical and Electronic Equipment
• Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE