Accession Number:

AD0711750

Title:

INFLUENCE OF DEFECTS INDUCED BY LOW-ENERGY PROTONS ON DIFFUSION LENGTH OF MINORITY CARRIERS IN p-TYPE SILICON,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date:

1970-07-22

Pagination or Media Count:

9.0

Abstract:

The authors describe the results of investigations into the effect of irradiation by protons with energies E equals 1-6 MeV on electron diffusion length in p-type silicons. Two types of silicon were investigated silicon obtained by melt extrusion and doped with boron at a given concentration, and noncrucible, vacuum-grown silicon doped with aluminum in a given concentration. Analysis of the spectral characteristics of n-p-structures revealed variations in the diffusion length of minority current carriers in p-type silicon due to defects induced by proton bombardment. The anomalous results for electron diffusion length after irradiation by 1 and 2 MeV protons is attributed to the diffusion length measurement method. Discrepancy between experimental and theoretical curves for electron diffusion length changes following irradiation by protons with energies E equals 4-6 MeV is attributed to defect annealing. Author

Subject Categories:

  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE