BULK SEMICONDUCTOR LIMITERS.
Final rept. 10 Feb 69-9 Feb 70,
RENSSELAER POLYTECHNIC INST TROY N Y DIV OF ELECTROPHYSICS
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A single, silicon element, iris limiter component was developed for X and K-band operation. Typical limiters have provided good isolation 25 db with small low level loss 0.5 dB and good high power handling capability 20 KW at X-band and 10 KW at Ku-band. Numerous fabrication procedures and element structures were evaluated in order to obtain an optimal element. The use of shallow diffused contacts, a checkerboard configuration, and a thin 3 to 5 mils dot-plane structure proved most desirable. Compensated GaAs elements were investigated. Multiple slit irises and filter techniques were investigated in order to achieve broader bandwidth operation. A three element filter comprised of one active limiter and two passive cavities doubled the 1 dB down bandwidth. Similar broadband performance was achieved with a double slit iris, with improved low level loss, but degraded limiting characteristics. Author
- Electrical and Electronic Equipment