Accession Number:

AD0707984

Title:

STUDY OF NEUTRON DAMAGE TO SEMICONDUCTORS USING JUNCTION DEVICES.

Descriptive Note:

Final rept. 23 Jul 68-13 Nov 69,

Corporate Author:

CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB

Personal Author(s):

• Oldham,W. G.

Report Date:

1969-11-01

Pagination or Media Count:

55.0

Abstract:

Detailed measurements on special gated Si pn diodes yield the damage parameters associated with the three basic current components in p-n junctions. Recombination in the neutral bulk, recombination and generation in the space-charge region, and recombination and generation at the surface are characterized over a wide range of neutron doses and injection levels. Author

Descriptors:

• *SEMICONDUCTOR DIODES
• *DAMAGE
• *SILICON
• NEUTRON REACTIONS
• SPACE CHARGE
• DOPING
• TUNNELING(ELECTRONICS)
• TUNNELING(ELECTRONICS)

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE