STUDY OF NEUTRON DAMAGE TO SEMICONDUCTORS USING JUNCTION DEVICES.
Final rept. 23 Jul 68-13 Nov 69,
CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
Pagination or Media Count:
Detailed measurements on special gated Si pn diodes yield the damage parameters associated with the three basic current components in p-n junctions. Recombination in the neutral bulk, recombination and generation in the space-charge region, and recombination and generation at the surface are characterized over a wide range of neutron doses and injection levels. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics