Accession Number:

AD0707343

Title:

Si - ZnS HETEROJUNCTIONS. II. SINGLE CRYSTAL FILMS OF ZINC SULPHIDE ON SILICON,

Descriptive Note:

Corporate Author:

SIGNALS RESEARCH AND DEVELOPMENT ESTABLISHMENT CHRISTCHURCH (ENGLAND)

Personal Author(s):

• Hill,J. S.
• Rawlins,T. G. R.
• Simpson,G. N.

Report Date:

1970-01-01

Pagination or Media Count:

41.0

Abstract:

A technique for the growth of single-crystal epitaxial films of zinc sulphide on silicon has been evolved. The film is grown by condensation of vapour sublimed from a zinc sulphide source in ultra-high vacuum. Optical, electron and scanning electron microscopy are used to examine the topography of the films produced, and X-ray and electron diffraction studies are used to evaluate the crystal structure of the deposits and substrates. Author

Descriptors:

• *SEMICONDUCTING FILMS
• *ZINC SULFIDES
• *EPITAXIAL GROWTH
• VAPOR PLATING
• SINGLE CRYSTALS
• SILICON
• ELECTRON DIFFRACTION
• X RAY DIFFRACTION
• UNITED KINGDOM

Subject Categories:

• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE