EFFECT OF STRESS WAVES ON P-N JUNCTIONS.
Final scientific rept. 1 Jan 67-31 Dec 69,
RESEARCH TRIANGLE INST DURHAM N C
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The electrical properties of p-n junctions under the influence of a time varying mechanical stress were investigated. A cantilevered beam of the semiconductor crystal was used to produce the mechanical stress. A theoretical model for the effects are presented along with experimental data. The thermal generation rate of charge carriers in gold-doped Si was measured as a function of stress and temperature. The generation rate was observed to increase as much as 100 percent at strain levels of 0.005. A theoretical model is presented which accounts for stress induced changes in gold energy level. Several organometallic compounds were investigated to determine the influence of hydrostatic and anisotropic strains on the electrical resistance. Large pressure related changes in resistivity were observed in square planar d8 complexes of iridium and platinum in which metal-metal interaction is postulated. Compounds not having adjacent metal symmetry showed significantly less piezoresistance effects. Author
- Solid State Physics