Accession Number:
AD0706308
Title:
LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PbTe AND Pb(0.8)Sn(0.2)Te,
Descriptive Note:
Corporate Author:
MASSACHUSETTS INST OF TECH CAMBRIDGE CENTER FOR MATERIALS SCIENCE AND ENGINEERING
Personal Author(s):
Report Date:
1970-04-01
Pagination or Media Count:
17.0
Abstract:
Laser emission is obtained from forward biased evaporated metal barriers on degenerate p-PbTe and p-Pb0.8Sn0.2Te at T 4.2 degrees K. Metals with small work functions such as In, Pb, and Zn produce a degenerate inverted n-type surface region on p-type samples without chemical doping. Low threshold laser emission has been obtained from these barriers on p-PbTe at a wavelength of 6.4 micrometers and from Pb barriers on p-Pb0.8Sn0.2Te at a wavelength of 15 micrometers. Author
Descriptors:
Subject Categories:
- Lasers and Masers
- Solid State Physics