Accession Number:

AD0706308

Title:

LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PbTe AND Pb(0.8)Sn(0.2)Te,

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE CENTER FOR MATERIALS SCIENCE AND ENGINEERING

Report Date:

1970-04-01

Pagination or Media Count:

17.0

Abstract:

Laser emission is obtained from forward biased evaporated metal barriers on degenerate p-PbTe and p-Pb0.8Sn0.2Te at T 4.2 degrees K. Metals with small work functions such as In, Pb, and Zn produce a degenerate inverted n-type surface region on p-type samples without chemical doping. Low threshold laser emission has been obtained from these barriers on p-PbTe at a wavelength of 6.4 micrometers and from Pb barriers on p-Pb0.8Sn0.2Te at a wavelength of 15 micrometers. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE