ROOM TEMPERATURE INJECTION LUMINESCENCE IN II-VI SEMICONDUCTORS.
Final rept. 1 Nov 68-31 Oct 69,
BOWMAR CANADA LTD OTTAWA (ONTARIO) OPTOELECTRONICS DIV
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The experimental program described in this report has primarily been concerned with ivestigations of room temperature injection luminescence in ZnTe. Congruent preliminary investigations have involved the growth of ZnTe crystals with particular emphasis on the incorporation of efficient recombination centers associated with the isoelectronic oxygen center, and investigation of the photoluminescent properties of as-grown crystals and crystals subjected to post-growth annealing. Author
- Solid State Physics