MEMORY UNIT MATRIX,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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The paper presents a storage device matrix containing cylindrical magnetic thin films, numerical and digital control lines and a metallic backing. To decrease the inductance of the control lines and to simplify replacement of the cylindrical magnetic thin films, the metallic backing is made with semi-cylindrical grooves in which the cylindrical magnetic thin films are placed. The numerical control lines pass over the films and the backing. Elastic inserts are placed between the numerical lines and the edges of the backing.
- Computer Hardware