Accession Number:

AD0702897

Title:

INJECTION ELECTROLUMINESCENCE IN II-VI SEMICONDUCTING COMPOUNDS.

Descriptive Note:

Final rept. 1 Oct 68 - 30 Sep 69,

Corporate Author:

GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER

Report Date:

1970-03-01

Pagination or Media Count:

101.0

Abstract:

Single crystals of Cd1-xMgxTe have been grown by a vertical zone-refining technique using material synthesized from Mg and CdTe. The crystals can be made n-type conducting with x up to 0.35. Aluminum and I introduce hydrogenic-type donor levels while In, Cl, and Br create deeper levels. Faraday effect measurements have shown that the band structure of Cd1-xMgxTe is similar to that of other II-VI compounds, and that the electron effective mass is 0.17. The diffusivity and the activation energy for diffusion of Al in ZnSe, ZnSe0.5Te0.5 and ZnTe have been determined in the temperature range of 700 degrees to 1000 degrees C. Luminescence efficiency measurements on ZnSexTe1-x under cathode ray excitation have shown that in undoped and P-doped crystals the efficiency drops from about 2 at 77 degrees K to about 0.002 at 300 degrees K, while Al-doped crystals maintain an approximately 1 efficiency throughout this temperature range. Junction profile studies and spectral distribution measurements suggest that most of the radiative recombinations occur in a transition region between the n-type bulk of the diodes. A study of liquid epitaxial growth of ZnSexTe1-x diodes has been initiated. Author

Subject Categories:

  • Crystallography
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE