Accession Number:

AD0701395

Title:

NEGATIVE CONDUCTIVITY IN SOLID STATE AVALANCHE DIODES

Descriptive Note:

Technical note

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

• Berger, Henry

Report Date:

1969-12-16

Pagination or Media Count:

15.0

Abstract:

A new and useful parameter sigma for avalanche diodes is obtained which possesses the properties associated with negative conductivity. It is shown how sigma unifies the description of various aspects of device behavior such as diode impedance Z, total current, and the effect of device radius on performance. A greatly simplified, approximate formula for Z is obtained, in terms of sigma, which predicts reasonably well the significant trends, zero- crossings, and peaks.

Descriptors:

• *AVALANCHE DIODES
• SILICON
• NEGATIVE RESISTANCE CIRCUITS
• ELECTRICAL CONDUCTIVITY
• ELECTRICAL IMPEDANCE

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE