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COMPUTATION OF AVALANCHE AND SPACE-CHARGE EFFECTS IN SEMICONDUCTORS AND GASES,
HARRY DIAMOND LABS WASHINGTON D C
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The report describes the FORTRAN IV program written to compute the behavior of electron and hole ion currents in a semiconductor or gas. The behavior is described using the continuity equations with the effects of electron and hole ionization and their recombination rate and Maxwells electrostatic equation. The partial differential equations are solved using a parallel method with first-order differencing, and the integrals are numerically evaluated using the trapezoidal rule. The program is designed for use on the IBM 7094 digital computer. The program results compare favorably with experimental work. Author
APPROVED FOR PUBLIC RELEASE