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EFFECT OF GAMMA IRRADIATION ON THE ELECTRICAL CHARACTERISTICS OF SPECIALLY PURE SILICON,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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This is a continuation of earlier research which showed that silicon with low impurity content does not change its resistivity when bombarded by fast electrons. The present article describes the results of irradiation of highly purified silicon with gamma rays. Single-crystal silicon was obtained by crucible-less zone melting in highly purified hydrogen. The change in the electric characteristics was determined by measuring the Hall effect and the resistivity at temperatures from 160 to 330K. Plots are presented of the dependence of the relative change in the Hall mobility of the carriers on the gamma irradiation dose, of the temperature dependence of the Hall mobility for pure and ordinary samples, the relative change of carrier density as a function of the gamma irradiation dose, and the temperature dependence for the pure and ordinary samples, as well as the temperature dependence of the Fermi levels calculated from the experimental data. The results show that whereas in ordinary samples the number of carriers gradually decreased with increasing dose, pure samples showed a marked increase with increasing density, above a certain minimal dose. Author
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