Accession Number:

AD0699949

Title:

INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.

Descriptive Note:

Semi-Annual technical summary rept. no. 3 Jun-Nov 69,

Corporate Author:

BELL AND HOWELL RESEARCH LABS PASADENA CALIF

Personal Author(s):

Report Date:

1969-12-01

Pagination or Media Count:

33.0

Abstract:

The indium-arsenide-phosphide system was studied further. Several highly doped InP ingots were prepared and evaluated. Revised power and efficiency figures for the InAs1-xPx diode lasers prepared previously are given. The interaction of 1.06 micron light from one of these InAs1-xPx diodes with a neodymium-doped glass fiber was studied. A light amplitude amplification of 47 dB or approximately 50,000 was obtained, showing the feasibility of obtaining modulated 1.06 micron light in this manner. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE