INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.
Semi-Annual technical summary rept. no. 3 Jun-Nov 69,
BELL AND HOWELL RESEARCH LABS PASADENA CALIF
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The indium-arsenide-phosphide system was studied further. Several highly doped InP ingots were prepared and evaluated. Revised power and efficiency figures for the InAs1-xPx diode lasers prepared previously are given. The interaction of 1.06 micron light from one of these InAs1-xPx diodes with a neodymium-doped glass fiber was studied. A light amplitude amplification of 47 dB or approximately 50,000 was obtained, showing the feasibility of obtaining modulated 1.06 micron light in this manner. Author
- Lasers and Masers
- Solid State Physics