Accession Number:

AD0698395

Title:

ABSORPTION-LINE BROADENING IN BORON-DOPED SILICON,

Descriptive Note:

Corporate Author:

BRITISH COLUMBIA UNIV VANCOUVER DEPT OF PHYSICS

Personal Author(s):

Report Date:

1967-04-13

Pagination or Media Count:

8.0

Abstract:

In boron-doped silicon, the excitation of bound holes from the acceptor ground state to the excited states leads to an infrared absorption-line spectrum. In a recent half-width study of the boron absorption lines, Colbow 1963 separated the various line-broadening contributions for the first time. Part of Colbows half-widths is now found to be due to external strains introduced by the sample mounting. New half-width measurements of strain-free mounted boron-doped silicon are presented, Colbows work is corrected, and additional information regarding the various broadening contributions is given. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE