Accession Number:

AD0698382

Title:

IONIC MOBILITY IN THE INSULATOR LAYER OF THIN FILM TRANSISTORS,

Descriptive Note:

Corporate Author:

SASKATCHEWAN UNIV SASKATOON DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Bradley,J.

Report Date:

1968-06-14

Pagination or Media Count:

3.0

Abstract:

The mobility of the instability inducing ions in the SiO-SiO2 layer of vacuum deposited FETs has been estimated to be about 0.000001 cm sqV sec. Author

Descriptors:

• (*FIELD EFFECT TRANSISTORS
• STABILITY)
• (*IONS
• MOBILITY)
• SILICON COMPOUNDS
• SILICON DIOXIDE
• MONOXIDES
• VAPOR PLATING
• VACUUM APPARATUS
• CANADA

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE