Accession Number:

AD0698382

Title:

IONIC MOBILITY IN THE INSULATOR LAYER OF THIN FILM TRANSISTORS,

Descriptive Note:

Corporate Author:

SASKATCHEWAN UNIV SASKATOON DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1968-06-14

Pagination or Media Count:

3.0

Abstract:

The mobility of the instability inducing ions in the SiO-SiO2 layer of vacuum deposited FETs has been estimated to be about 0.000001 cm sqV sec. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE