A STUDY OF THE DEPLETION REGION CARRIER GENERATION RATE DUE TO GOLD IMPURITIES IN SILICON UNDER ANISOTROPIC STRESS.
Interim rept. no. 2, 1 Aug 68-1 Aug 69,
RESEARCH TRIANGLE INST DURHAM N C
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The thermal generation rate of charge carriers in a depletion region in gold-doped silicon was measured as a function of strain applied in the 100 direction over a range of temperatures. Thermal generation rate was also measured as a function of 100 strain at a single temperature. The technique used is relatively new and is based on the relaxation to equilibrium of a deeply depleted Metal-Oxide-Semiconductor capacitor. The generation rate was observed to increase nearly 100 percent from zero applied strain to an applied strain of 0.005, at 20 degrees C. Experimental results were explained using a model based on Shockley-Read statistics and results from deformation-potential theory. A good fit of theory to experimental results was obtained under the condition that the center of gravity of the two levels shifts upward with the hydrostatic coefficient of Nathan and Paul 1962. The electron capture coefficients characterizing the gold acceptor level were found to decrease with strain. Author
- Solid State Physics