INVESTIGATION OF SURFACE DEFECTS IN SEMICONDUCTORS.
Final rept. 1 Mar 68-16 Jun 69,
BENDIX CORP SOUTHFIELD MICH BENDIX RESEARCH LABS
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The surface states of p- and n-channel insulated gate field effect transistor IGFET devices have been studied by monitoring the temperature dependence of the relaxation times of the gate-to-substrate capacitance transients. Surface states in the Si-Si02 interface of these devices, found by this technique, are characterized by discrete energy levels in the forbidden band and cross sections ranging from 10 to the -14th power to 10 to the -19th powersq.cm. Some of these states are tentatively assigned to vacancies V associated with interstitial oxygen v Oi, substitutional boron V Bs, or a neighboring vacancy V V, whereas others are associated with defects still not completely identified. Agreement with energy-band theories of thermally oxidized silicon is found for some of these states. Lack of agreement for others is attributed to the influence of source and drain sections and background continuous surface states. Author
- Electrical and Electronic Equipment
- Solid State Physics