INTERDIFFUSION IN LEAD SELENIDE.
MASSACHUSETTS INST OF TECH CAMBRIDGE CENTER FOR MATERIALS SCIENCE AND ENGINEERING
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A theoretical model was developed to explain the movement of a p-n junction in PbSe by the interdiffusion process. This model, which is a modification of an interdiffusion theory due to Brebrick, has one value for the diffusion coefficient in p-type material and another value in n-type material. Solutions to the diffusion equation for this model are obtained and compared to experimental interdiffusion data for PbSe at 400C obtained by the p-n junction method. The significance of the results to device fabrication and annealing is discussed. Author
- Solid State Physics