COMPUTER-AIDED TECHNIQUE FOR THE ACCURATE DETERMINATION OF THE SEMICONDUCTOR IMPURITY DOPING PROFILE.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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The basic equations for the determination of semiconductor net impurity doping profiles are derived. A computer technique is introduced which aids the accurate solution of the basic equations. The described method is mathematically rigorous and represents a vast improvement over previously used techniques. Author
- Solid State Physics