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STRAIN SENSITIVITY IN INDIUM ANTIMONIDE FILMS,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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The stress effect was measured and the effects of electron concentration and film thickness on stress-sensitivity were studied in InSb thin films deposited by flash evaporation of commercial InSb powder on a heated glass substrate. Concentration of electrons varied by autodoping within 5 x 10 to the 16th power to 3 x 10 to the 18th power electronscc. Electrical characteristics of the films of varied thickness 0.3-1.9 micrometers were measured and the data were tabulated. Author
APPROVED FOR PUBLIC RELEASE