Accession Number:

AD0694844

Title:

STRAIN SENSITIVITY IN INDIUM ANTIMONIDE FILMS,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• Sirota,N. N.
• Bolvanovich,E. I.

Report Date:

1969-01-30

Pagination or Media Count:

9.0

Abstract:

The stress effect was measured and the effects of electron concentration and film thickness on stress-sensitivity were studied in InSb thin films deposited by flash evaporation of commercial InSb powder on a heated glass substrate. Concentration of electrons varied by autodoping within 5 x 10 to the 16th power to 3 x 10 to the 18th power electronscc. Electrical characteristics of the films of varied thickness 0.3-1.9 micrometers were measured and the data were tabulated. Author

Descriptors:

• (*SEMICONDUCTOR DEVICES
• *TRANSDUCERS)
• (*INDIUM ANTIMONIDES
• STRAIN(MECHANICS))
• SEMICONDUCTING FILMS
• HALL EFFECT
• STRESSES
• USSR

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE