Accession Number:

AD0694494

Title:

GROWTH, PROCESSING, AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS,

Descriptive Note:

Corporate Author:

STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s):

• Rosengreen,Arne

Report Date:

1969-08-01

Pagination or Media Count:

25.0

Abstract:

Techniques were developed for fabricating Hall samples for the evaluation of epitaxial layers of beta-silicon carbide. Methods were developed for easy determination of the 111 surface of the beta-silicon carbide substrates. Epitaxial growth on only one side of the substrate was accomplished by gluing the substrate to the pedestal with a sugar solution. Measurements made on an n-type layer deposited on an n-type substrate indicate that the epitaxial layer has much higher resistivity than has been obtained in solution-grown crystals. p-Type substrates were also grown and evaluated. Their impurity concentration was estimated to be in the range 10 to the 20th power -10 to the 21st powercu cm. The Hall mobility of the holes at room temperature was 4 sq cmV sec. Author

Descriptors:

• *SILICON CARBIDES
• SINGLE CRYSTALS
• EPITAXIAL GROWTH
• SUBSTRATES
• CHARGE CARRIERS

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE