Accession Number:

AD0694302

Title:

THE GROWTH OF THIN NICKEL FILMS ON A (III) ALUMINIUM SURFACE.

Descriptive Note:

Technical rept.,

Corporate Author:

ROYAL AIRCRAFT ESTABLISHMENT FARNBOROUGH (ENGLAND)

Personal Author(s):

• Dorey,G.

Report Date:

1968-11-01

Pagination or Media Count:

19.0

Abstract:

Nickel films 35A thick were deposited in UHV on to clean III aluminium surfaces at various temperatures between 70C and 330C, to determine over what temperature range one can obtain a thin continuous layer of Ni or Ni rich phase. At 70C the Ni formed an epitaxial layer containing small epitaxial particles of AlNi. At 250C a continuous layer of Al3Ni was produced with no preferred orientation. At 330C an island structure was obtained with the islands elongated in the Al110 directions the islands were unstable at 330C and tended to become spherical to minimise their surface area. Comparison with deposits on NaCl indicated that Ni atoms are more mobile on Al at about 300C than they are on NaCl at the same temperature. Author

Descriptors:

• *NICKEL
• CRYSTAL STRUCTURE
• METAL FILMS
• SUBSTRATES
• DEPOSITION
• ALUMINUM
• CRYSTAL GROWTH
• UNITED KINGDOM

Subject Categories:

• Metallurgy and Metallography
• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE