Accession Number:

AD0694128

Title:

ON THE THEORY OF THE DESTRIAU EFFECT.

Descriptive Note:

Final rept.,

Corporate Author:

NATIONAL ELECTROTECHNICAL INST TURIN (ITALY)

Personal Author(s):

• Bonfiglioli,Guido
• Brovetto,Piero
• Busca,Gianluigi
• Mojoni,Adriana

Report Date:

1969-09-01

Pagination or Media Count:

61.0

Abstract:

A novel model of the Destriau effect ac EL in ZnSCu is presented that looks capable of interpreting in a consistent way all the principal experimental features of EL. This result is obtained through consideration of the semiconducting properties of definite partial dislocations bordering stacking faults in hexagonal structure basal planes. After a thorough critical survey of existing theories, the crystal defect spoken of is described and its properties illustrated, showing how they lead to the occurrence of the Destriau effect. Author

Descriptors:

• (*ZINC SULFIDES
• *ELECTROLUMINESCENCE)
• SEMICONDUCTORS
• CRYSTAL DEFECTS
• BAND THEORY OF SOLIDS
• ITALY

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE