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ON THE THEORY OF THE DESTRIAU EFFECT.
NATIONAL ELECTROTECHNICAL INST TURIN (ITALY)
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A novel model of the Destriau effect ac EL in ZnSCu is presented that looks capable of interpreting in a consistent way all the principal experimental features of EL. This result is obtained through consideration of the semiconducting properties of definite partial dislocations bordering stacking faults in hexagonal structure basal planes. After a thorough critical survey of existing theories, the crystal defect spoken of is described and its properties illustrated, showing how they lead to the occurrence of the Destriau effect. Author
APPROVED FOR PUBLIC RELEASE