Accession Number:

AD0692517

Title:

INVESTIGATION OF RADIATION EFFECTS IN SEMICONDUCTORS,

Descriptive Note:

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS

Report Date:

1969-03-01

Pagination or Media Count:

41.0

Abstract:

Resistivity and lifetime measurements have been taken on neutron-irradiated n-type silicon having impurity concentrations ranging from 10 to the 14th power to 10 to the 18th powercubic cm. The values, as obtained by various techniques, basically follow expected trends. However, the measurement method becomes significant as the concentration of neutron-introduced defects becomes comparable with the original donor concentration. A second test bar for the purpose of modeling bipolar h sub FE degradation has been characterized after neutron irradiation. Pre- and post-irradiation data on the test bars indicate that the neutron-induced component of base current is predominantly in the bulk for a wide range of profiles under investigation. The base-surface concentrations ranged from 1 X 10 to the 18th powercubic cm to greater than 10 to the 20th powercubic cm and the base widths from less than 1 line to 14 lines. The bulk current is being related to terminal small-signal device characteristics. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE