Accession Number:

AD0692430

Title:

LOW TCC CAPACITORS FOR CIRCUIT APPLICATIONS,

Descriptive Note:

Corporate Author:

HARRY DIAMOND LABS WASHINGTON D C

Personal Author(s):

Report Date:

1969-04-01

Pagination or Media Count:

25.0

Abstract:

To meet requirements for temperature-stable components, an investigation into the temperature-dependence of capacitor dielectrics was undertaken. A review is given of the Gevers-du Pre theory of amorphous dielectrics, and its findings are examined for applicability to amorphous films of silicon monoxide SiO. Films of SiO were deposited onto borosilicate glass substrates at rates ranging from 54 to 133 Amin. The values of the TCC showed a strong dependence upon the deposition rate both negative and positive values were obtained--the former for the slower rates of deposition. All the TCC data agreed qualitatively with the Gevers-du Pre theory, which suggests that the negative TCCs are due to large expansion coefficients and low film densities obtained at slow deposition rates. The results of the present study also suggest that zero TCCs are possible and should occur at a rate near 68 Amin. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Miscellaneous Materials

Distribution Statement:

APPROVED FOR PUBLIC RELEASE