Accession Number:

AD0691839

Title:

NONUNIFORM FIELD DISTRIBUTION IN AVALANCHING InSb CRYSTALS.

Descriptive Note:

Scientific rept. no. 1,

Corporate Author:

ROYAL INST OF TECH STOCKHOLM (SWEDEN) MICROWAVE DEPT

Personal Author(s):

Report Date:

1969-05-29

Pagination or Media Count:

34.0

Abstract:

The electric field distribution and current-voltage characteristic in the avalanche region is calculated for InSb crystals of both n- and p-type. It is shown that when the transit time is short compared to the carrier lifetime space charge effects make the field distribution highly nonuniform. A current controlled negative differential resistance may also develop due to the same effects. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE