Accession Number:
AD0691839
Title:
NONUNIFORM FIELD DISTRIBUTION IN AVALANCHING InSb CRYSTALS.
Descriptive Note:
Scientific rept. no. 1,
Corporate Author:
ROYAL INST OF TECH STOCKHOLM (SWEDEN) MICROWAVE DEPT
Personal Author(s):
Report Date:
1969-05-29
Pagination or Media Count:
34.0
Abstract:
The electric field distribution and current-voltage characteristic in the avalanche region is calculated for InSb crystals of both n- and p-type. It is shown that when the transit time is short compared to the carrier lifetime space charge effects make the field distribution highly nonuniform. A current controlled negative differential resistance may also develop due to the same effects. Author
Descriptors:
Subject Categories:
- Solid State Physics