NONUNIFORM FIELD DISTRIBUTION IN AVALANCHING InSb CRYSTALS.
Scientific rept. no. 1,
ROYAL INST OF TECH STOCKHOLM (SWEDEN) MICROWAVE DEPT
Pagination or Media Count:
The electric field distribution and current-voltage characteristic in the avalanche region is calculated for InSb crystals of both n- and p-type. It is shown that when the transit time is short compared to the carrier lifetime space charge effects make the field distribution highly nonuniform. A current controlled negative differential resistance may also develop due to the same effects. Author
- Solid State Physics