MEASUREMENT OF THE NEGATIVE DIFFERENTIAL MOBILITY IN GALLIUM ARSENIDE AND GERMANIUM.
STANFORD UNIV CALIF STANFORD ELECTRONICS LABS
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The dependence of the drift velocity of electrons on the electric field v-E characteristics in GaAs at room temperature and Ge at low temperatures below 78 degrees K were investigated. The primary object of these investigations is the establishment and characterization of negative differential mobility regions in the v-E characteristics. Author
- Solid State Physics