MICROWAVE PHOTODIODES: SENSITIVITY AS A FUNCTION OF BIAS AND GEOMETRY.
NAVAL RESEARCH LAB WASHINGTON D C
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A simple model of the microwave semiconductor photodiode has been examined theoretically with an emphasis on the dependence of sensitivity on bias, frequency, and geometrical factors. The noise equivalent power NEP of a small diode, a large diode, and an array of small diodes have been compared. According to this theory the large diode and the array of diodes with the same total active area have the same NEP at low frequencies, but the array is superior in high-frequency NEP. These conclusions are independent of diode bias. Curves of NEP vs frequency are presented for an array of nine diodes and for an array of 100 diodes. Author
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