STUDY OF RADIATION EFFECTS ON NOVEL SEMICONDUCTOR DEVICES
Scientific rept. no. 1
FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CA FAIRCHILD SEMICONDUCTOR
Pagination or Media Count:
A radiation resistant power junction field effect transistor has been designed. Several types of silicon planar Schottky barrier diodes have been exposed to ionizing radiation and the same phenomena are observed as on p-n junctions - increase in the fast surface state density and the build-up of a positive space charge in the oxide. Capacitance-voltage and Hall effect measurements have been made on high quality epitaxial GaAs before and after exposure to nuclear reactor radiation.
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products