Accession Number:

AD0691044

Title:

STUDY OF RADIATION EFFECTS ON NOVEL SEMICONDUCTOR DEVICES

Descriptive Note:

Scientific rept. no. 1

Corporate Author:

FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CA FAIRCHILD SEMICONDUCTOR

Report Date:

1969-06-01

Pagination or Media Count:

48.0

Abstract:

A radiation resistant power junction field effect transistor has been designed. Several types of silicon planar Schottky barrier diodes have been exposed to ionizing radiation and the same phenomena are observed as on p-n junctions - increase in the fast surface state density and the build-up of a positive space charge in the oxide. Capacitance-voltage and Hall effect measurements have been made on high quality epitaxial GaAs before and after exposure to nuclear reactor radiation.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE