PHYSICAL CHARACTERIZATION OF THE EMITTER TIME CONSTANT IN MICROPOWER TRANSISTORS.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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An interpretation of the emitter time constant is presented that, in many respects, is more precise and logical than conventional definitions. Under simplified assumptions that particularly apply to high grade transistors in the micropower range, the displacement current in the base region becomes a direct measure for the reduction of emitter efficiency with frequency. On the basis of formalism developed, the emitter time constant is calculated for small and large signal conditions and compared with the switching speed of signals at low power levels. Methods are discussed for optimizing emitter time constants by proper choice of materials and operating conditions. Author
- Electrical and Electronic Equipment