Accession Number:

AD0688838

Title:

TUNNELING MEASUREMENT OF ELECTRON-PLASMON INTERACTIONS IN DEGENERATE SEMICONDUCTORS,

Descriptive Note:

Corporate Author:

ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s):

Report Date:

1969-06-01

Pagination or Media Count:

45.0

Abstract:

The electronic proper self energy due to electron-plasmon interactions in degenerate semiconductors was evaluated using the Random Phase Approximation. This self energy together with elementary models of the barrier penetration factor is used to calculate the tunneling characteristics of rectifying metal contacts on the degenerate semiconductors. Author

Subject Categories:

  • Nuclear Physics and Elementary Particle Physics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE