Accession Number:

AD0688837

Title:

ONE-ELECTRON AND PHONON-ASSISTED TUNNELING IN N-Ge SCHOTTKY BARRIERS,

Descriptive Note:

Corporate Author:

AEROSPACE INDUSTRIES ASSOCIATION OF AMERICA INC WASHINGTON D C

Personal Author(s):

Report Date:

1969-06-01

Pagination or Media Count:

41.0

Abstract:

The experimental tunneling conductance of metal-Ge contacts is compared to the predictions of the one-electron Schottky-barrier model in which all parameters are determined from experiments other than tunneling. Agreement is found in the magnitude and the shape of conductance vs bias curves for vacuum-cleaved, Sb-doped Ge units. The qualitative features of the As-doped units are also in agreement, but a discrepancy in magnitude exists. Substantially larger conductance is found in air-cleaved junctions than in vacuum- cleaved junctions. Capacitance measurements reveal that the barrier height for air-cleaved junctions is V sub b 0.51V whereas V sub b 0.63V for vacuum-cleaved junctions. Pronounced step increases in the conductance due to phonon-assisted tunneling occur at eV plus or minus h omega where h omega is the energy of a Ge phonon at the Brillouin zone boundary along the 111 direction. Structure is clearly observed at all four phonon energies TA, LA, LO, TO. The magnitude of the LA phonon-assisted tunneling is accounted for in a theoretical calculation bases upon a mechanism suggested by Kleinman to explain similar phenomena in Ge p-n junctions. The strength of the TA and LO phonon-assisted tunneling also appear to be in reasonable agreement with qualitative considerations, but the observed TO phonon-assisted tunneling is stronger than expected. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE