Accession Number:

AD0688696

Title:

PROPERTIES OF GALLIUM PHOSPHIDE GREEN ELECTROLUMINESCENT DIODES.

Descriptive Note:

Technical rept.,

Corporate Author:

STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1969-04-01

Pagination or Media Count:

93.0

Abstract:

A study has been made of the electrical and optical properties of gallium Phosphide green electroluminescent diodes which were formed by zinc or beryllium diffusions into n-type sulfur-doped GaP grown by the vapor-phase epitaxial technique on GaAs substrates. The objective was to determine the dominant current transport mechanisms and the dominant radiative recombination processes and to study their dependences on the electron carrier concentration. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE