Accession Number:

AD0688220

Title:

A CENTER OF COMPETENCE IN SOLID STATE MATERIALS AND DEVICES,

Descriptive Note:

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Report Date:

1969-04-10

Pagination or Media Count:

305.0

Abstract:

The report describes technical findings in three main areas. The first area concerns semiconductors and semiconductor devices. Noise in integrated operational amplifiers is characterized, with special emphasis given to burst noise. Measurements are made of the photomagnetoelectric and photoconductive effects in n-type silicon at cryogenic temperatures and attendant theory is developed. Another study delineates issues basic to device modeling for the computer-aided analysis and design of integrated circuits. The second main area deals with measurement techniques. Use of the field ion microscope is discussed for the analysis of dislocations and stacking faults in crystals. A new method for studying the structure of thin films during the earliest stages of growth is described the techniques of electrically recording diffraction patterns are reviewed and applied to characterizing surfaces and surface layers on an atomic scale. The application of quantitative dielectric relaxation receives attention as an analytical tool in the investigation of insulating and semiconducting materials. The third main area concerns insulating and semiconducting glasses. One study describes the effects of neutron bombardment on nucleation and growth processes. Another deals with the information on the nucleation sequence provided by hot-stage transmission microscopy of Lithia-silica glass. A final study reports concerning the effect of environment on the dielectric properties of high alumina substrates. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE