MAGNETOELECTRIC EFFECTS IN SEMICONDUCTOR JUNCTIONS.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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The effect of applying a transverse magnetic field on p-n junctions of Si and Ge has been investigated, and the results are presented. Included in this investigation are in-house fabricated devices as well as a variety of commercially available Si and Ge diodes. The effects observed were universally present in all junctions investigated and suggest, therefore, the possibility of using magnetic fields for evaluating the material parameters of processed semiconductor devices. Author
- Electrical and Electronic Equipment
- Solid State Physics