ON THE ANALYTIC PROPERTIES OF TRANSISTOR BETA.
BALLISTIC RESEARCH LABS ABERDEEN PROVING GROUND MD
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The properties of current gain as used in the design of transistor circuits are analyzed in terms of parameter tolerances, physical limitations introduced by current differencing, and causes and handling of nonlinearity of current gain. It is shown that the dependence of current gain on a small difference of large numbers introduces difficulties which can only be minimized by smoothing techniques based on orthogonalization in a least-squares sense. The relation between d-c and small-signal current gains is established in terms of a Chebychev-type least-squares representation. Author
- Electrical and Electronic Equipment