Accession Number:

AD0687259

Title:

EFFECTS OF NEUTRON RADIATION ON SECOND BREAKDOWN AND THERMAL BEHAVIOR OF SILICON TRANSISTORS.

Descriptive Note:

Research and development technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Report Date:

1969-03-01

Pagination or Media Count:

11.0

Abstract:

A method of measuring and the subsequent analysis of this data has indicated that the thermal time constant of silicon diffused transistors decreases with increasing neutron dosage. Empirically, it was noted that thermal time constant degradation constants can be assigned to all devices examined. For the silicon planar devices studied, degradation constants varied from 2.6 x 10 to the -13th power sq cmneut for the radiation resistant devices, to 1.4 x 10 to the -12th power sq cmneut. for other devices examined. By examining previous data for single diffused transistors the thermal time constant degradation factor was 2 x 10 to the -11th power sq cmneut. The conclusion of this report is that the thermal time constant, which is related to second breakdown, effectively degrades upon exposure to neutron radiation, thereby decreasing the safe operating area of the device. However, the extent of degradation per dose may be predictable by data presented in the text. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE