LOW TEMPERATURE INFRARED PHOTOCONDUCTORS.
Final rept. 1 Jul 67-28 Feb 69,
RADIO CORP OF AMERICA PRINCETON N J CONVERSION DEVICES LAB
Pagination or Media Count:
Research directed toward the development of an infrared-sensitive solid-state photoconductive multiplier is reported. The possibility of the use of amorphous Se as the insulator layer together with PbTe as the photoconductor for the multiplier has been investigated. The transport properties of this combination have been found to be rather irreproducible. Evidence is presented which suggests that the source of the difficulty is the conversion, at room temperature, of amorphous Se to the hexagonal crystalline state. This conversion appears to be catalyzed by contact between the amorphous Se and crystalline PbTe or PbSe. Because of this, amorphous Se is unsuitable as the insulator layer if the photoconductor is to be a lead chalcogenide. Also reported is an investigation of the feasibility of a solid-state multiplier in which hot carriers impact ionize impurity-banded deionized donors in silicon. It is believed that the results, for at least one sample, may be interpreted in terms of electron multiplication by this mechanism. The interpretation is not as clear for other samples, requiring the postulation of the ionization of bound electrons by hot holes in at least one case. It is believed that the results are encouraging enough to warrant further study. Author
- Electrical and Electronic Equipment
- Infrared Detection and Detectors
- Solid State Physics